Clas-SiC enables customers to make the leap from lab to fab through fast development and prototyping of new SiC devices.
We support customers all the way through development, seeding samples, up to medium volume production, after which we would actively facilitate transfer to a high volume foundry partner.
Clas-SiC offers not only device processing but also process module solutions as well as individual process capabilities.
New process modules are continually being developed, as is a planar MOSFET PDK (Process Design Kit), which when made available, will allow customers to design custom MOSFET’s on Clas-SiC’s common MOSFET platform.
|Implant hard mask|
|Vertical trench, including hydrogen anneal|
|Carbon cap implant anneal|
|Backside ohmic contact|
|Frontside n+ and p+ ohmic contacts|
|Prototype Reliability of Packaged Parts|
|MOSFET Gate dielectric||Q4 2020|
|MOSFET gate contact||Q4 2020|
|MOSFET source contact||Q4 2020|
|Thinned wafer backside ohmic contact||Q1 2021|
|1200V MOSFET Process Design Kit||Q1 2021|
|1700V MOSFET Process Design Kit||Q2 2021|
|3300V MOSFET Process Design Kit||Q3 2021|