Clas-SiC enables customers to make the leap from lab to fab through fast development and prototyping of new SiC devices. 


Clas-SiC Solutions 

We support customers all the way through development, seeding samples, up to medium volume production, after which we would actively facilitate transfer to a high volume foundry partner. 

Clas-SiC offers not only device processing but also process module solutions as well as individual process capabilities. 

New process modules are continually being developed, as is a planar MOSFET PDK (Process Design Kit), which when made available, will allow customers to design custom MOSFET’s on Clas-SiC’s common MOSFET platform. 


Solutions

Alignment target 
Implant hard mask 
Vertical trench, including hydrogen anneal
Carbon cap implant anneal
Gate polysilicon
Backside ohmic contact
Frontside n+ and p+ ohmic contacts
Schottky contact
Power metal
Passivation
Backside Tri-Metal
Wafer Test
Prototype Reliability of Packaged Parts

In development

SolutionDue Date
MOSFET Gate dielectricQ4 2020
MOSFET gate contactQ4 2020
MOSFET source contactQ4 2020
Thinned wafer backside ohmic contactQ1 2021
1200V MOSFET Process Design KitQ1 2021
1700V MOSFET Process Design KitQ2 2021
3300V MOSFET Process Design KitQ3 2021

SiC Devices, Silicon Carbide Foundry, Sub-contract Services, Fast Prototyping 

From concept to prototype to manufacture.