Clas-SiC enables customers to make the leap from lab to fab through fast development and prototyping of new SiC devices.
Clas-SiC Solutions
We support customers all the way through development, seeding samples, up to medium volume production, after which we would actively facilitate transfer to a high volume foundry partner.
Clas-SiC offers not only device processing but also process module solutions as well as individual process capabilities.
New process modules are continually being developed, as is a planar MOSFET PDK (Process Design Kit), which when made available, will allow customers to design custom MOSFET’s on Clas-SiC’s common MOSFET platform.
Solutions
Alignment target |
Implant hard mask |
Vertical trench, including hydrogen anneal |
Carbon cap implant anneal |
Gate polysilicon |
Backside ohmic contact |
Frontside n+ and p+ ohmic contacts |
Schottky contact |
Power metal |
Passivation |
Backside Tri-Metal |
Wafer Test |
Prototype Reliability of Packaged Parts |
In development
Solution | Due Date |
---|---|
MOSFET Gate dielectric | Q4 2020 |
MOSFET gate contact | Q4 2020 |
MOSFET source contact | Q4 2020 |
Thinned wafer backside ohmic contact | Q1 2021 |
1200V MOSFET Process Design Kit | Q1 2021 |
1700V MOSFET Process Design Kit | Q2 2021 |
3300V MOSFET Process Design Kit | Q3 2021 |