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Clas-SiC enables customers to make the leap from lab to fab through fast development and prototyping of new SiC devices.
Clas-SiC Solutions
We support customers all the way through development, seeding samples, up to medium volume production, after which we would actively facilitate transfer to a high volume foundry partner.
Clas-SiC offers not only device processing but also process module solutions as well as individual process capabilities.
New process modules are continually being developed, as is a planar MOSFET PDK (Process Design Kit), which when made available, will allow customers to design custom MOSFET’s on Clas-SiC’s common MOSFET platform.
Process Design Kits
| 1200V MOSFET Process Design Kit – beta version in use |
| 1700V MOSFET Process Design Kit – due Q3 2021 |
| 3300V MOSFET Process Design Kit – due Q3 2021 |
| JBS/MPS Diode Design Kit – released |
Process Modules
| Alignment target |
| Implant hard mask |
| Vertical trench, including hydrogen anneal |
| Carbon cap implant anneal |
| MOSFET gate dielectric and gate polysilicon |
| Backside ohmic contact |
| Frontside n+ and p+ ohmic contacts |
| Schottky contact |
| MOSFET gate and source contacts |
| Power metal |
| Passivation |
| Backside tri-metal |
| Wafer test |
| Prototype reliability of packaged parts |
| Thinned wafer backside ohmic contact – capability installed and solution due Q2 2021 |