Clas-SiC enables customers to make the leap from lab to fab through fast development and prototyping of new SiC devices.
We support customers all the way through development, seeding samples, up to medium volume production, after which we would actively facilitate transfer to a high volume foundry partner.
Clas-SiC offers not only device processing but also process module solutions as well as individual process capabilities.
New process modules are continually being developed, as is a planar MOSFET PDK (Process Design Kit), which when made available, will allow customers to design custom MOSFET’s on Clas-SiC’s common MOSFET platform.
Process Design Kits
|1200V MOSFET Process Design Kit – beta version in use|
|1700V MOSFET Process Design Kit – due Q3 2021|
|3300V MOSFET Process Design Kit – due Q3 2021|
|JBS/MPS Diode Design Kit – released|
|Implant hard mask|
|Vertical trench, including hydrogen anneal|
|Carbon cap implant anneal|
|MOSFET gate dielectric and gate polysilicon|
|Backside ohmic contact|
|Frontside n+ and p+ ohmic contacts|
|MOSFET gate and source contacts|
|Prototype reliability of packaged parts|
|Thinned wafer backside ohmic contact – capability installed and solution due Q2 2021|