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Clas-SiC enables customers to make the leap from lab to fab through fast development and prototyping of new SiC devices.
Clas-SiC Solutions
We support customers all the way through development, seeding samples, up to medium volume production, after which we would actively facilitate transfer to a high volume foundry partner.
Clas-SiC offers not only device processing but also process module solutions as well as individual process capabilities.
New process modules are continually being developed, as is a planar MOSFET PDK (Process Design Kit), which when made available, will allow customers to design custom MOSFET’s on Clas-SiC’s common MOSFET platform.
Solutions
| Alignment target |
| Implant hard mask |
| Vertical trench, including hydrogen anneal |
| Carbon cap implant anneal |
| Gate polysilicon |
| Backside ohmic contact |
| Frontside n+ and p+ ohmic contacts |
| Schottky contact |
| Power metal |
| Passivation |
| Backside Tri-Metal |
| Wafer Test |
| Prototype Reliability of Packaged Parts |
In development
| Solution | Due Date |
|---|---|
| MOSFET Gate dielectric | Q4 2020 |
| MOSFET gate contact | Q4 2020 |
| MOSFET source contact | Q4 2020 |
| Thinned wafer backside ohmic contact | Q1 2021 |
| 1200V MOSFET Process Design Kit | Q1 2021 |
| 1700V MOSFET Process Design Kit | Q2 2021 |
| 3300V MOSFET Process Design Kit | Q3 2021 |