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Clas-SiC’s low to medium scale SiC production capacity delivers time to market advantage.
Clas-SiC Capabilities
Customer R&D is supported by over 200 man-years of Silicon Carbide processing expertise. We have created a library of “off the shelf” Process Module IP to minimise technical risk and optimise both R&D cycles and manufacturability.
Clas-SiC’s toolset is fully capable of processing 150mm SiC wafers through JBS/MPS diode and MOSFET flows.
We welcome approaches to discuss fabrication of other SiC devices.
We are also happy to facilitate partial processing of wafers (eg laser scribe, ion implant, carbon cap anneal).
In-house Capabilities
| Item | Description |
|---|---|
| Laserscribe | Both Si and SiC capable |
| Photolithography | i-line Photolithography down to 0.5um |
| Polyimide | (negative acting photodefinable) and cure. |
| Plasma oxide/nitride etch | LAM4520 |
| Plasma silicon/polysilicon/SiC target etch | LAM9400 |
| Plasma metal etch | LAM9600 |
| Resist strip | Plasma ash, Piranha and solvent strip |
| Wet etch | Various wet metal, oxide, polysilicon etches available |
| Pre-furnace clean | Mercury acid processor |
| Oxidation furnaces | Temperature up to 1300°C, gases N2, O2, H2, N2O, NO, Cl source |
| LPCVD furnaces | Polysilicon, silicon nitride, low temperature oxide (LTO) |
| Polysilicon Doping | Furnace Diffusion |
| Implant anneal | Centrotherm Activator, capable of 1750°C |
| Rapid Thermal Anneal | Mattson 2800 – capable of 1250°C, gases N2, Ar, forming gas |
| PECVD | Silane oxide, TEOS oxide, Silicon Nitride |
| Sputter | Ni, Ti, TiW, Al, AlCu |
| Back sputter | STS XM90 with Ti, Ni, Ag capability |
| Ion Implant | ULVAC IH-860PSiC. N, P, Al ions up to 400keV with 1.2MeV available via multiple charge ions. Temperature room to 600°C. Beam parallel within ±0.3°, twist 0-360°, tilt 0-60° |
| Wafer Thinning | 175um available |
| Back side laser anneal | Process available now |
| Test | Automated test, up to 10kV reverse and 500A forward, pulsed |
| Characterisation | Carl Zeiss Sigma SEM with EDX |