Clas-SiC’s low to medium scale SiC production capacity delivers time to market advantage.
Customer R&D is supported by over 200 man-years of Silicon Carbide processing expertise. We have created a library of “off the shelf” Process Module IP to minimise technical risk and optimise both R&D cycles and manufacturability.
Clas-SiC’s toolset is fully capable of processing 150mm SiC wafers through power diode and MOSFET flows. Processing for trench architectures is currently being developed.
We welcome approaches to discuss fabrication of other SiC devices.
We are also happy to facilitate partial processing of wafers (eg laser scribe, ion implant, carbon cap anneal).
|Laserscribe||Both Si and SiC capable|
|Photolithography||i-line Photolithography down to 0.5um|
|Polyimide||(negative acting photodefinable) and cure.|
|Plasma oxide/nitride etch||LAM4520|
|Plasma silicon/polysilicon/SiC target etch||LAM9400|
|Plasma metal etch||LAM9600|
|Vertical SiC Trench Etch||Available currently via subcontract|
|Resist strip||Plasma ash, Piranha and solvent strip|
|Wet etch||Various wet metal, oxide, polysilicon etches available|
|Pre-furnace clean||Mercury acid processor|
|Oxidation furnaces||Temperature up to 1300°C, gases N2, O2, H2, N2O, NO, Cl source|
|LPCVD furnaces||Polysilicon, silicon nitride, low temperature oxide (LTO)|
|Polysilicon Doping||Furnace Diffusion|
|Implant anneal||Centrotherm Activator, capable of 1750°C|
|Rapid Thermal Anneal||Mattson 2800 – capable of 1250°C, gases N2, Ar, forming gas|
|PECVD||Silane oxide, TEOS oxide, Silicon Nitride|
|Sputter||Ni, Ti, TiW, Al, AlCu|
|Back sputter||STS XM90 with Ti, Ni, Ag capability|
|Ion Implant||ULVAC IH-860PSiC. N, P, Al ions up to 400keV with 1.2MeV available via multiple charge ions.|
Temperature room to 600°C. Beam parallel within ±0.3°, twist 0-360°, tilt 0-60°
|Wafer Thinning||200um available now, 175um & 150um due Q1 2022|
|Back side laser anneal||Equipment installed. Process available now|
|Test||Automated test, up to 10kV reverse and 500A forward, pulsed|
|Characterisation||Carl Zeiss Sigma SEM with EDX|